This paper proposed a novel family of PWM strategies for single-phase quasi-switched boost inverter (qSBI). By combining shoot-through mode in the inverter’s switches and the turning-on state of an additional switch, the qSBI produced a high voltage gain without adding any passive components. Compared to the conventional PWM strategy for the same input and output voltage gain, the introduced PWM strategies for qSBI could reduce voltage stress across semiconductors and capacitor with the following additional merits: having smaller high-frequency inductor current and capacitor voltage ripples, using high modulation index with low shoot-through duty cycle, and having higher efficiency. Circuit analysis, operating theories, and simulation results of the single-phase qSBI with the introduced PWM5 strategy are shown. A 500-W laboratory prototype was constructed and the effectiveness of the introduced PWM strategy was validated. The qSBI with the proposed PWM strategies is suitable for applications where the required voltage gain lies between 2 and 3.