Silicon Carbide (SiC)-based single-phase quasi-Z-source inverter (qZSI) is proposed in this paper to provide a high power density and cost benefit solution for the Photovoltaic (PV) power application. Bulky qZS impedance network is unavoidable in conventional single-phase qZSI even with SiC power devices, due to handling double-line-frequency (2ω) ripple. The design of SiC-based single-phase qZSI is addressed in this paper through power loss evaluation and impedance parameters determination with active power filter’s phase leg for compensting the 2ω ripple. All passive components are small in size and weight under the high switching frequency of SiC devices. Power devices’ losses of SiC and Si-based inverter are compared. Simulation results at the designed parameters are introduced to validate the proposed solution.